搜索结果: 1-1 共查到“物理学 High growth rate 4H-SiC epitaxial growth”相关记录1条 . 查询时间(0.125 秒)
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...