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Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Double quantum dot enhancement-mode silicon lateral geometry
2010/11/17
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
期刊信息
篇名
Intermediate-coupling polaron properties in wurtzite nitride semiconductors
语种
英文
撰写或编译
撰写
作者
闫祖威1,2,班士良2,梁希侠2
第一作者单位
1 内蒙古农业大学理学院；2 内蒙古大学理工学院
刊物名称
Phys. Lett.A326
页面
9
出版日期
2004年
4月
日
文章标识(IS...
Effects of Disorder on the Exchange Coupling in (Ga,Mn)As Diluted Magnetic Semiconductors
Disorder Exchange coupling Diluted magnetic semiconductors
2010/8/26
A theoretical study of the effects of disorder on the Mn-Mn exchange interactions for Ga1¡xMnxAs diluted magnetic semiconductors is presented. The disorder is intrinsically considered in the cal...