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A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation
semiconductor technology CMOS image sensor proton irradiation average brightness TRIM simulation
2009/8/17
The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109 to 4×10×10cm－2 and 1×109 to 2×1012cm－2 have been carried out respectively. The color pictures and...
A 3-D Hall Sensor for Precise Angular Position Measurements
Magnetometers Integrated Hall sensors Angular position errors estimation
2010/4/9
A 3-D silicon Hall effect sensor for precise angular-position measurement over 360° rotation is presented. This vector microtransducer functionally integrates into a common sensor region two parallel-...